OCR · A-Level · Physics
Course version: H556 · Version from Sept 2015
(c) distinction between conductors, semiconductors and insulators in terms…
Full specification wording
Mean drift velocity: (c) distinction between conductors, semiconductors and insulators in terms of n.
The three classes of material are distinguished by the number density n of charge carriers available to move.
Checked against the OCR H556 specification (opens in a new tab) on .
- Point 3 of 3
- 4 key terms
Study notes
From the checked teaching notes for this specification point.
The idea
The three classes of material are distinguished by the number density n of charge carriers available to move. In a conductor such as copper, each atom contributes roughly one free electron, so n is very large, of order 10²⁸ to 10²⁹ m⁻³, and a small drift velocity gives a large current. In an insulator such as polythene, almost all electrons are bound to atoms, so n is extremely small and negligible current flows. A semiconductor such as silicon has a much smaller n than a metal, typically 10¹⁶ to 10¹⁹ m⁻³ at room temperature, but n rises steeply with temperature as more electrons are freed, so its resistance falls. Since I = Anev, at a fixed current a smaller n requires a larger drift velocity.
What earns the marks
- States that conductors have a very high number density of charge carriers, insulators a very low one, and semiconductors an intermediate value.
- Links the size of n to the current produced for a given drift velocity through I = Anev.
- Explains that in semiconductors n increases with temperature, so resistance decreases.
- Recognises that in metals n is approximately constant with temperature, while lattice vibrations dominate resistance.
- Uses order-of-magnitude values, for example n ≈ 10²⁸ m⁻³ for copper and n ≈ 10¹⁶ m⁻³ for intrinsic silicon.
Common mistakes and how to put them right
Saying insulators have no charge carriers at all.
Put it right: They have very few mobile carriers, which is why the current is negligible rather than exactly zero.
Confusing number density n with resistivity or resistance.
Put it right: n is a property of the material's carrier population, not a direct measure of opposition to current.
Claiming n in a metal increases greatly with temperature.
Put it right: In a metal n is roughly constant and the resistance rise comes mainly from increased lattice vibration.
Assuming a semiconductor behaves like a metal because both conduct.
Put it right: A semiconductor's conductivity depends strongly on temperature and on doping.
Exam tips
- Quote approximate orders of magnitude for n to support your comparison.
- Link every statement about n back to I = Anev so the physics reasoning is explicit.
- For temperature questions, separate the effect on n from the effect on lattice vibrations.
- Use the phrase 'number density of charge carriers' rather than 'number of electrons' to stay precise.
Try the lesson
The start of the Mean drift velocity: (c) distinction between conductors, semiconductors and insulators in terms of n. lesson, made from checked teaching notes for this specification point.
Listen
The three classes of material are distinguished by the number density n of charge carriers available to move. In a conductor such as copper, each atom contributes roughly one free electron, so n is very large, of order 10²⁸ to 10²⁹ m⁻³, and a small drift velocity gives a large current. In an insulator such as polythene, almost all electrons are bound to atoms, so n is extremely small and negligible current flows. A semiconductor such as silicon has a much smaller n than a metal, typically 10¹⁶ to 10¹⁹ m⁻³ at room temperature, but n rises steeply with temperature as more electrons are freed, so its resistance falls. Since I = Anev, at a fixed current a smaller n requires a larger drift velocity. A strong answer earns marks for these points. States that conductors have a very high number density of charge carriers, insulators a very low one, and semiconductors an intermediate value. Links the size of n to the current produced for a given drift velocity through I = Anev. Explains that in semiconductors n increases with temperature, so resistance decreases. Recognises that in metals n is approximately constant with temperature, while lattice vibrations dominate resistance. Exam tip: Quote approximate orders of magnitude for n to support your comparison.
Key words
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Number density of charge carriers
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Conductors, semiconductors and insulators
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Temperature dependence of conductivity
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Microscopic model of current
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See every definition
- Number density of charge carriers
- The number density n of charge carriers available to move distinguishes the three classes of material.
- Conductors, semiconductors and insulators
- Conductors have a very high number density of charge carriers, insulators a very low one, and semiconductors an intermediate value.
- Temperature dependence of conductivity
- In semiconductors n rises steeply with temperature as more electrons are freed, so resistance falls, while in metals n is approximately constant with temperature.
- Microscopic model of current
- Since I = Anev, at a fixed current a smaller n requires a larger drift velocity.
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